2008. 8. 29 1/3 semiconductor technical data ktc4666 epitaxial planar npn transistor revision no : 4 low noise amplifier application. feature h high h fe : h fe =600 q 3600. h noise figure : 0.5db(typ.) at f=100khz. maximum rating (ta=25 ? ) dim millimeters a b d e usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 0.10 n 0.10 min p0.1 max + _ + _ + _ + _ + _ p 1. emitter 2. base 3. collector electrical characteristics (ta=25 ? ) h rank fe type name marking lot no. t characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =8v, i c =0 - - 0.1 a dc current gain h fe (1)(note) v ce =6v, i c =2ma 600 - 3600 h fe (2) v ce =5v, i c =1ma 500 - 3600 h fe (3) v ce =10v, i c =2ma 600 - - collector-emitter saturation voltage v ce(sat) (1) i c =10ma, i b =1ma - 0.05 0.15 v v ce(sat) (2) i c =50ma, i b =5ma - 0.07 0.2 v v ce(sat (3) i c =100ma, i b =10ma - 0.12 0.25 v transition frequency f t v ce =10v, i c =10ma 100 250 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 3.5 - pf noise figure nf (1) v ce =6v, i c =0.1ma, f=100khz, rg=10k ? - 0.5 - db nf (2) v ce =6v, i c =0.1ma, f=1khz, rg=10k ? - 0.3 - characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 8 v collector current i c 150 ma base current i b 30 ma collector power dissipation p c 200 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? note : h fe classification a:600 q 1800 , b:1200 q 3600 * package mounted on 99.5% alumina 10mm ? 8mm ? 0.6mm
2008. 8. 29 2/3 ktc4666 revision no : 4
2008. 8. 29 3/3 ktc4666 revision no : 4
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